| Authors |
Mikhaylov Petr Grigor'evich, doctor of technical sciences, professor, sub-department of information-measuring systems, Penza State University of Architecture and Construction (28 Germana Titova street, Penza, Russia), Е-mail: pit_mix@mail.ru
Glebova Tatyana Aleksandrovna, associate professor, sub-department of information-measuring systems, Penza State University of Architecture and Construction (28 Germana Titova street, Penza, Russia), Е-mail: pit_mix@mail.ru
Sokolov Aleksandr Vladimirovich, chief specialist-inspector of the State Construction Supervision in the Penza region (34а Popova street, Penza, Russia), Е-mail: sokoljv_av_avto@mail.ru
Analieva Azhar Urazbaevna, teacher, College at the scientific and educational complex, Kazakhstan University of Innovative and Telecommunication Systems (81 M. Mametovoy street, Uralsk, Kazakhstan), Е-mail: azhara_1980@mail.ru
Mikhaylov Aleksey Petrovich, leading specialist, LLC PLC System (4 Tsiolkovsky street, Moscow, Russia), Е-mail: krendeleschik@gmail.com
Fadeev Evgeniy Dmitrievich, student, Penza State University (40 Krasnaya street, Penza, Russia), Е-mail: mercenary.exe@gmail.com
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| Abstract |
Background. Researched technology and construction management methods of electrophysical characteristics (EPC) sensory structures of the sensors are formed of polysilicon films (PSF).
Materials and methods. Mathematical modeling of PSF and the sensing element (SE) on its basis, the methods of modification of PSF based on ion doping are Proposed.
Results. The calculated relations for determining the electrical resistance of PSF are given. The obtained values of the critical values of the doses of the impurities of boron ion doping is implemented. The thermal and deformation characteristics of PSF are calculated and analyzed, and the quantitative values of the temperature resistance coefficients and the values of the strain sensitivity of crystallites and barrier layers of PSF are given. With regard to the development of sensor elements analyzed and selected technologies of modification of the structure of PSF with the purpose of increase of strain and decrease of TKS (for strain gages), and reduce the strain and increase TКS (for RTD). Such methods allow to generate one SE tenzo – and heat-sensitive elements. Experimental models of pressure sensors with PC strain gauges were manufactured and tested.
Conclusions. Application of the offered technological and constructive methods of control of EPC of sensor elements and structures of sensors allowed to increase stability of technical characteristics and to give the chance to form on one CE tenzo-and thermoelements due to the choice of modes IL.
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| Key words |
sensor, polycrystalline silicon, film, characteristics, sensor, strain gauge, thermoelement
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