Article 3416

Title of the article

INTELLECTUAL SENSOR BASED ON PHOTOGALVANIC EFFECT 

Authors

Pershenkov Petr Petrovich, candidate of technical sciences, professor, sub-department of physics, Penza State University (40 Krasnaya street, Penza, Russia), peter@pnzgu.ru
Savenkov Aleksandr Valer´evich, applicant, Penza State University (40 Krasnaya street, Penza, Russia), peter@pnzgu.ru

Index UDK

621.317

Abstract

Background. Work devoted to topical issues of practical use of nanotechnology advances in measurement technology. The aim is to develop a smart sensor based on the photovoltaic effect to measure magnetic field strength.
Results. The structure of the transmitter of the magnetic field intensity into an electrical current, followed by analog-to-digital conversion. To correct the transfer characteristic of the microprocessor used. A corresponding algorithm. The block diagram of smart sensor based on a microprocessor. An algorithm for computing the linearization of the transfer function of the photovoltaic inverter.
Conclusions. The possibility of using advances in nanoscale nanostructures, namely photovoltaic effect for the construction of a primary transmitter magnetic field. Considered a computer algorithm provides a linear transfer characteristic. 

Key words

sensor, measurements, microprocessor, programs, nanostructures, photogalvanic effect, magnetic field

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Дата создания: 07.04.2017 10:42
Дата обновления: 07.04.2017 11:19