OPTIMIZATION OF THE PARAMETERS OF THE SEMICONDUCTOR SENSOR ELEMENT IN THE FORM OF A CIRCULAR MEMBRANE
IN ORDER TO INCREASE THE SENSITIVITY 

Elizaveta A. Ryblova, Postgraduate student, Penza State University (40 Krasnaya street, Penza, Russia ) Elizaveta.ryblova@mail.ru
Vadim S. Volkov, Candidate of technical sciences, associate professor, associate professor of sub-department of instrument engineering, Penza State University (40 Krasnaya street, Penza, Russia ) vadimv_1978@mail.ru

 621.3.032

 10.21685/2307-5538-2021-2-5

Background. The aim of the study is to develop a semiconductor sensing element for a pressure sensor based on the piezoresistive effect in the form of a profiled membrane with increased sensitivity.
Materials and methods. Modeling of a sensitive element in the form of a profiled silicon membrane by the finite element method was carried out to determine the geometric parameters of the membrane cross-section that provide maximum sensitivity.
Results. The optimal geometric characteristics of the cross-section of the profiled membrane of a semiconductor pressure sensor are determined to achieve maximum conversion sensitivity. A simulation model of a semiconductor sensitive element of a pressure sensor with increased sensitivity was created to study the influence of geometric parameters of the membrane cross-section on the characteristics of the transducer by the finite element method.
Conclusions. The analysis of the results obtained in the course of the study showed that the profiled membrane has the best sensitivity in comparison with a flat membrane of the same radius.

Key words

semiconductor piezoresistive pressure sensor, sensing element, silicone membrane, radial and tangential mechanical stresses, simulation modeling