THE STUDY OF DOPANT CONCENTRATION INFLUENCE ON THE TEMPERATURE DEPENDENCE OF GAGE FACTOR FOR SEMICONDUCTOR STRAIN GAUGES 

Volkov Vadim Sergeevich, candidate of technical sciences, associate professor, sub-department of instrument making, Penza State University (40 Krasnaya street, Penza, Russia), distorsion@rambler.ru
Ryblova Elizaveta Anatol'evna, student, Penza State University (40 Krasnaya street, Penza, Russia), distorsion@rambler.ru

621.3.032

Background. The object of the research is study of temperature and dopant dependence of gage factor for the p-type strain gages, as well as the determination of the dopant concentration optimal values to ensure a minimum temperature dependence of the gage factor.
Materials and methods. The analytical and graphical simulation of influence temperature and dopant concentration on the gage factor of p-type semiconductor strain gauges was completed.
Results. It has been shown that semiconductor strain gage pressure sensors have significant temperature error, which depends on the dopant concentration in the semiconductor. During the study was graphically determined optimum value of the doping level at which the temperature error is minimal. Using optimal the concentrations of impurities were calculated values of strain gauges resistance, the output signal of the bridge circuit and the temperature error of gage factor. 
Conclusions. Analytical and graphical dependences obtained in this research can be used to determine the optimal concentration of dopant to provide the minimum temperature error and maximum sensitivity by the analytical method.

semiconductor piezoresistive pressure sensor, gage factor, analytical simulation, dopant concentration, temperature error