Article 7123
Title of the article |
HIGH-TEMPERATURE ANNEALING OF MULTILAYER RESISTIVE STRUCTURES |
Authors |
Ekaterina A. Pecherskaya, Doctor of technical sciences, associate professor, head of the sub-department of information and measuring equipment and metrology, Penza State University (40 Krasnaya street, Penza, Russia), E-mail: pea1@list.ru |
Abstract |
Background. The relevance of the research topic is due to the development of radio-electronic equipment, which requires an increase in the level of electrical parameters of the electronic component base. The aim of the work is to study and search for optimal modes of high-temperature annealing of multilayer thin-film resistive structures. Materials and methods. Multilayer thin-film resistors were obtained by thermal vacuum spraying of nichrome X20CrNi75Al and kermet K-20S at the UVN-71 installation. Results. The results of the study of processes occurring in the structure and at the interface of films in multilayer thin-film resistors as a result of exposure to high temperatures in vacuum and in air, their effect on the irreversible change in resistance and temperature coefficient of resistance are presented. Conclusions. Technological modes of high-temperature annealing have been obtained that extend the fitting life of multilayer thin-film resistors up to 20 %, with resistance instability not exceeding 0,4 %. |
Key words |
thin-film resistor, high-temperature annealing, thermal stabilization, resistance, temperature coefficient of resistance |
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For citation: |
Pecherskaya E.A., Gurin S.A., Novichkov M.D. High-temperature annealing of multilayer resistive structures. Izmerenie. Monitoring. Upravlenie. Kontrol' = Measuring. Monitoring. Management. Control. 2023;(1):56–61. (In Russ.). doi:10.21685/2307-5538-2023-1-7 |
Дата обновления: 10.04.2023 15:46