Article 7220

Title of the article

THE ANALYSIS OF THE POSSIBILITIES OF USING SEMICONDUCTOR STRAIN GAGES TO BUILD FREQUENCY INTEGRATING UNFOLDING CONVERTERS OF MECHANICAL VALUES INTO FREQUENCY 

Authors

Volkov Vadim Sergeevich, candidate of technical sciences, associate professor, sub-department of instrument making, Penza State University (40 Krasnaya street, Penza, Russia), E-mail: distorsion@rambler.ru
Volkova Nataliya Valentinovna, candidate of biological sciences, associate professor, head of sub-department of chemistry, theory and methods of teaching chemistry, Penza State University (40 Krasnaya street, Penza, Russia), E-mail: distorsion@rambler.ru
Konkina Maria Sergeevna, postgraduate student, Penza State University (40 Krasnaya street, Penza, Russia), E-mail: distorsion@rambler.ru 

Index UDK

621.3.032 

DOI

10.21685/2307-5538-2020-2-7 

Abstract

Background. The object of the research is analyzing the possibilities of using bridge circuits with semiconductor strain gages in conjunction with frequency integrating and deploying converters to create sensitive sensor elements that work under high temperatures.
Materials and methods. Methods of semiconductor physics, semiconductor tensometry, and DC and AC electrical circuits for calculating the dependence of the resistance of a semiconducting resistive-strain gauge on the strain and temperature and frequency of the voltage at the output of the FIUC.
Results. The resulting expression for the output signal frequency integrating deployer converter with a semiconductor rectifier circuit, proving that accounting for the temperature dependence of the stress sensitivity of semiconducting resistive-strain leads to a
dependence of the output frequency of the temperature, and the calculations of numerical characteristics of the output FIUC signal and temperature error taking into account the typical parameters of the bridge circuit with semiconducting resistive-strain gauges.
Conclusions. Based on the calculations made, it is concluded that due to the temperature dependence of the strain sensitivity of semiconductor strain gages, an additional multiplicative component of the error of the output frequency of the FIUC occurs, and, as a result, it is necessary to develop additional methods and means of temperature compensation, taking into account the features of semiconductor strain gages. 

Key words

sensitive element, MEMS technologies, semiconducting resistive-strain gauge, bridge circuit, strain sensitivity, frequency integrating unfolding converter (FIUC) 

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Дата создания: 21.07.2020 13:41
Дата обновления: 22.07.2020 08:31