GEOMETRICAL STOP-ETCHING IN MICROELECTROMECHANICAL SYSTEMS TECHNOLOGY 

Pautkin Valeriy Evgen’evich, candidate of technical sciences, chief specialist, Scientific-research Institute of physical measurements (8/10 Volodarskogo street, Penza, Russia), inercial@niifi.ru
Prilutskaya Svetlana Vladislavovna, design engineer, Scientific-research Institute of physical measurements (8/10 Volodarskogo street, Penza, Russia), inercial@niifi.ru

681.2.084

10.21685/2307-5538-2017-4-7

Background. Technological features of the formation of silicon structures of micromechanical sensors by the method of anisotropic «stop-etching» of silicon are considered. The aim of the paper is to analyze the basic possibilities of obtaining structures by anisotropic etching methods based on the «self-stopping» of the etching process.
Materials and methods. The crystallographic positions are used, based on the difference in the etching rates of silicon in different crystallographic directions.
Results. The possibility of forming silicon structures with an X-shaped cross-section is shown only by the method of anisotropic etching.
Conclusions. The use of the proposed method makes it possible to increase the manufacturability of manufacturing micromechanical sensors.

anisotropicetching, microelectromechanical systems, V-grooves, crystallographic plane, stop-etching, protective layer